MOSFET N-CH Enhancmnt Mode MOSFET
Products specifications
| Technology | Si |
| Maximum Operating Temperature | + 150 C |
| Transistor Polarity | N-Channel |
| Minimum Operating Temperature | - 55 C |
| Packaging | Reel |
| Vds - Drain-Source Breakdown Voltage | 350 V |
| Vgs - Gate-Source Voltage | 20 V |
| Pd - Power Dissipation | 1 W |
| Number of Channels | 1 Channel |
| Mounting Style | Through Hole |
| Channel Mode | Enhancement |
| Configuration | Single |
| Rds On - Drain-Source Resistance | 15 Ohms |
| Id - Continuous Drain Current | 150 mA |