MOSFET N-CH Enhancmnt Mode MOSFET
Products specifications
| Packaging | Cut Tape, Reel |
| Transistor Polarity | P-Channel |
| Technology | Si |
| Mounting Style | Through Hole |
| Id - Continuous Drain Current | 280 mA |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Channel Mode | Enhancement |
| Pd - Power Dissipation | 1 W |
| Vgs - Gate-Source Voltage | 30 V |
| Rds On - Drain-Source Resistance | 5 Ohms |
| Configuration | Single |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |