MOSFETs 100V 12Ohm
Lead Time: 35 Days
Products specifications
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Pd - Power Dissipation | 360 mW |
| Maximum Operating Temperature | + 150 C |
| Transistor Polarity | P-Channel |
| Technology | Si |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Number of Channels | 1 Channel |
| Vgs - Gate-Source Voltage | 10 V |
| Minimum Operating Temperature | - 55 C |
| Channel Mode | Enhancement |
| Id - Continuous Drain Current | 120 mA |
| Configuration | Single |
| Rds On - Drain-Source Resistance | 12 Ohms |
| Packaging | Cut Tape, MouseReel, Reel |