BPX 38-4

Phototransistors PHOTODIODE
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SKU: BPX 38-4

Availability: 1024 in stock

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R 143.03

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Phototransistors PHOTODIODE
Lead Time: 0 Days

Products specifications

Fall Time	15 us
Collector- Emitter Voltage VCEO Max	50 V
Collector-Emitter Breakdown Voltage	50 V
Minimum Operating Temperature	- 40 C
Product	Phototransistors
Collector-Emitter Saturation Voltage	200 mV
Rise Time	15 us
Peak Wavelength	880 nm
Maximum Operating Temperature	+ 125 C
Mounting Style	Through Hole
Dark Current	100 nA
Maximum On-State Collector Current	50 mA
Pd - Power Dissipation	220 mW

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Products specifications

Fall Time	15 us
Collector- Emitter Voltage VCEO Max	50 V
Collector-Emitter Breakdown Voltage	50 V
Minimum Operating Temperature	- 40 C
Product	Phototransistors
Collector-Emitter Saturation Voltage	200 mV
Rise Time	15 us
Peak Wavelength	880 nm
Maximum Operating Temperature	+ 125 C
Mounting Style	Through Hole
Dark Current	100 nA
Maximum On-State Collector Current	50 mA
Pd - Power Dissipation	220 mW