BPX 80

Phototransistors PHOTOTRANSISTOR

SKU: BPX 80

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R 354.49

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Phototransistors PHOTOTRANSISTOR

Products specifications

Mounting Style	Through Hole
Pd - Power Dissipation	90 mW
Collector-Emitter Saturation Voltage	150 mW
Collector- Emitter Voltage VCEO Max	35 V
Rise Time	6 us
Minimum Operating Temperature	- 40 C
Peak Wavelength	850 nm
Fall Time	6 us
Product	Phototransistors
Maximum Operating Temperature	+ 80 C
Maximum On-State Collector Current	50 mA
Dark Current	1 nA
Collector-Emitter Breakdown Voltage	35 V
Operating Supply Voltage	-

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Products specifications

Mounting Style	Through Hole
Pd - Power Dissipation	90 mW
Collector-Emitter Saturation Voltage	150 mW
Collector- Emitter Voltage VCEO Max	35 V
Rise Time	6 us
Minimum Operating Temperature	- 40 C
Peak Wavelength	850 nm
Fall Time	6 us
Product	Phototransistors
Maximum Operating Temperature	+ 80 C
Maximum On-State Collector Current	50 mA
Dark Current	1 nA
Collector-Emitter Breakdown Voltage	35 V
Operating Supply Voltage	-