Phototransistors PHOTOTRANSISTOR
Lead Time: 0 Days
Products specifications
|
Peak Wavelength
|
850 nm, Through Hole |
|
Rise Time
|
6 us, 1 nA |
|
Maximum Operating Temperature
|
+ 80 C, - 40 C |
|
Series
|
+ 80 C |
|
Operating Supply Voltage
|
850 nm, - |
|
Mounting Style
|
Miniature Array, Through Hole |
|
Collector-Emitter Breakdown Voltage
|
35 V |
|
Maximum On-State Collector Current
|
-, 50 mA |
|
Dark Current
|
1 nA, 150 mW |
|
Product
|
Phototransistors |
|
Minimum Operating Temperature
|
90 mW, - 40 C |
|
Collector-Emitter Saturation Voltage
|
35 V, 150 mW |
|
Collector- Emitter Voltage VCEO Max
|
50 mA, 35 V |
|
Pd - Power Dissipation
|
6 us, 90 mW |
|
Fall Time
|
6 us |