Phototransistors PHOTOTRANSISTOR
Lead Time: 0 Days
Products specifications
| Peak Wavelength | 850 nm, Through Hole |
| Rise Time | 6 us, 1 nA |
| Maximum Operating Temperature | + 80 C, - 40 C |
| Series | + 80 C |
| Operating Supply Voltage | 850 nm, - |
| Mounting Style | Miniature Array, Through Hole |
| Collector-Emitter Breakdown Voltage | 35 V |
| Maximum On-State Collector Current | -, 50 mA |
| Dark Current | 1 nA, 150 mW |
| Product | Phototransistors |
| Minimum Operating Temperature | 90 mW, - 40 C |
| Collector-Emitter Saturation Voltage | 35 V, 150 mW |
| Collector- Emitter Voltage VCEO Max | 50 mA, 35 V |
| Pd - Power Dissipation | 6 us, 90 mW |
| Fall Time | 6 us |