BPY 62-4

Phototransistors PHOTODIODE

SKU: BPY 62-4

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Quantity

10+

100+

Price

R 92.74

R 68.04

R 53.42

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Phototransistors PHOTODIODE

Products specifications

Dark Current	50 nA
Minimum Operating Temperature	- 40 C
Collector-Emitter Breakdown Voltage	35 V
Collector-Emitter Saturation Voltage	160 mV
Mounting Style	Through Hole
Collector- Emitter Voltage VCEO Max	35 V
Maximum On-State Collector Current	100 mA
Rise Time	9 us
Fall Time	9 us
Product	Phototransistors
Pd - Power Dissipation	200 mW
Maximum Operating Temperature	+ 125 C
Peak Wavelength	830 nm

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Products specifications

Dark Current	50 nA
Minimum Operating Temperature	- 40 C
Collector-Emitter Breakdown Voltage	35 V
Collector-Emitter Saturation Voltage	160 mV
Mounting Style	Through Hole
Collector- Emitter Voltage VCEO Max	35 V
Maximum On-State Collector Current	100 mA
Rise Time	9 us
Fall Time	9 us
Product	Phototransistors
Pd - Power Dissipation	200 mW
Maximum Operating Temperature	+ 125 C
Peak Wavelength	830 nm