Phototransistors PHOTODIODE
Lead Time: 70 Days
Products specifications
| Dark Current | 50 nA |
| Minimum Operating Temperature | - 40 C |
| Collector-Emitter Breakdown Voltage | 35 V |
| Collector-Emitter Saturation Voltage | 160 mV |
| Mounting Style | Through Hole |
| Collector- Emitter Voltage VCEO Max | 35 V |
| Maximum On-State Collector Current | 100 mA |
| Rise Time | 9 us |
| Fall Time | 9 us |
| Product | Phototransistors |
| Pd - Power Dissipation | 200 mW |
| Maximum Operating Temperature | + 125 C |
| Peak Wavelength | 830 nm |