Phototransistors PHOTOTRANSISTOR
Lead Time: 0 Days
Products specifications
|
Maximum Operating Temperature
|
- 40 C, + 80 C |
|
Collector- Emitter Voltage VCEO Max
|
50 mA, 32 V |
|
Collector-Emitter Saturation Voltage
|
150 mV, 32 V |
|
Rise Time
|
50 nA, - |
|
Operating Supply Voltage
|
850 nm, - |
|
Peak Wavelength
|
Through Hole, 850 nm |
|
Maximum On-State Collector Current
|
-, 50 mA |
|
Series
|
+ 80 C |
|
Product
|
Phototransistors |
|
Collector-Emitter Breakdown Voltage
|
32 V |
|
Pd - Power Dissipation
|
70 mW, - |
|
Minimum Operating Temperature
|
- 40 C, 70 mW |
|
Dark Current
|
150 mV, 50 nA |
|
Mounting Style
|
-, Through Hole |
|
Fall Time
|
- |