Phototransistors PHOTOTRANSISTOR
Lead Time: 0 Days
Products specifications
| Maximum Operating Temperature | - 40 C, + 80 C |
| Collector- Emitter Voltage VCEO Max | 50 mA, 32 V |
| Collector-Emitter Saturation Voltage | 150 mV, 32 V |
| Rise Time | 50 nA, - |
| Operating Supply Voltage | 850 nm, - |
| Peak Wavelength | Through Hole, 850 nm |
| Maximum On-State Collector Current | -, 50 mA |
| Series | + 80 C |
| Product | Phototransistors |
| Collector-Emitter Breakdown Voltage | 32 V |
| Pd - Power Dissipation | 70 mW, - |
| Minimum Operating Temperature | - 40 C, 70 mW |
| Dark Current | 150 mV, 50 nA |
| Mounting Style | -, Through Hole |
| Fall Time | - |