Phototransistors PHOTOTRANSISTOR
Lead Time: 0 Days
Products specifications
| Fall Time | 8 us, 9 us |
| Series | + 100 C |
| Product | Phototransistors |
| Maximum On-State Collector Current | 15 mA, - |
| Collector-Emitter Breakdown Voltage | 35 V |
| Rise Time | 8 us, 9 us, 15 mA |
| Dark Current | 15 mA, 200 mV |
| Operating Supply Voltage | -, 860 nm |
| Mounting Style | Through Hole, T-1 |
| Collector-Emitter Saturation Voltage | 200 mV, 35 V |
| Minimum Operating Temperature | - 40 C, 165 mW |
| Pd - Power Dissipation | 8 us, 9 us, 165 mW |
| Collector- Emitter Voltage VCEO Max | 35 V, 15 mA |
| Maximum Operating Temperature | + 100 C, - 40 C |
| Peak Wavelength | Through Hole, 860 nm |