Phototransistors PHOTOTRANSISTOR
Lead Time: 0 Days
Products specifications
|
Fall Time
|
8 us, 9 us |
|
Series
|
+ 100 C |
|
Product
|
Phototransistors |
|
Maximum On-State Collector Current
|
15 mA, - |
|
Collector-Emitter Breakdown Voltage
|
35 V |
|
Rise Time
|
8 us, 9 us, 15 mA |
|
Dark Current
|
15 mA, 200 mV |
|
Operating Supply Voltage
|
-, 860 nm |
|
Mounting Style
|
Through Hole, T-1 |
|
Collector-Emitter Saturation Voltage
|
200 mV, 35 V |
|
Minimum Operating Temperature
|
- 40 C, 165 mW |
|
Pd - Power Dissipation
|
8 us, 9 us, 165 mW |
|
Collector- Emitter Voltage VCEO Max
|
35 V, 15 mA |
|
Maximum Operating Temperature
|
+ 100 C, - 40 C |
|
Peak Wavelength
|
Through Hole, 860 nm |