Phototransistors PHOTOTRANSISTOR
Products specifications
| Rise Time | 7 us |
| Maximum Operating Temperature | + 85 C |
| Mounting Style | Through Hole |
| Peak Wavelength | 920 nm |
| Collector-Emitter Saturation Voltage | 140 mV |
| Collector- Emitter Voltage VCEO Max | 35 V |
| Pd - Power Dissipation | 150 mW |
| Minimum Operating Temperature | - 40 C |
| Dark Current | 50 nA |
| Fall Time | 9 us |
| Maximum On-State Collector Current | 50 mA |
| Collector-Emitter Breakdown Voltage | 35 V |
| Product | Phototransistors |