Phototransistors PHOTOTRANSISTOR
Products specifications
| Pd - Power Dissipation | 24 us, 34 us |
| Minimum Operating Temperature | 120 mW |
| Series | + 100 C |
| Mounting Style | SMT |
| Maximum Operating Temperature | - 40 C |
| Collector-Emitter Breakdown Voltage | 70 V |
| Operating Supply Voltage | 850 nm |
| Rise Time | 200 nA |
| Collector- Emitter Voltage VCEO Max | 50 mA |
| Fall Time | 24 us, 34 us |