Phototransistors PHOTOTRANSISTOR
Products specifications
|
Pd - Power Dissipation
|
24 us, 34 us |
|
Minimum Operating Temperature
|
120 mW |
|
Series
|
+ 100 C |
|
Mounting Style
|
SMT |
|
Maximum Operating Temperature
|
- 40 C |
|
Collector-Emitter Breakdown Voltage
|
70 V |
|
Operating Supply Voltage
|
850 nm |
|
Rise Time
|
200 nA |
|
Collector- Emitter Voltage VCEO Max
|
50 mA |
|
Fall Time
|
24 us, 34 us |