Phototransistors PHOTOTRANSISTOR
Lead Time: 0 Days
Products specifications
| Minimum Operating Temperature | - 40 C |
| Product | Phototransistors |
| Rise Time | 24 us, 34 us |
| Peak Wavelength | 850 nm |
| Dark Current | 100 nA |
| Maximum Operating Temperature | + 100 C |
| Collector-Emitter Breakdown Voltage | 70 V |
| Collector- Emitter Voltage VCEO Max | 70 V |
| Collector-Emitter Saturation Voltage | 170 mV |
| Fall Time | 24 us, 34 us |
| Maximum On-State Collector Current | 50 mA |
| Pd - Power Dissipation | 120 mW |