BSC019N06NSATMA1

MOSFETs IFX FET 60V
Lead Time: 105 Days

SKU: BSC019N06NSATMA1

Availability: 4824 in stock

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R 33.07

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MOSFETs IFX FET 60V
Lead Time: 364 Days

Products specifications

Qg - Gate Charge	77 nC
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Configuration	Single
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Technology	Si
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	60 V
Vgs th - Gate-Source Threshold Voltage	2.1 V
Packaging	Cut Tape, Reel
Pd - Power Dissipation	136 W
Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	1.95 mOhms

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Products specifications

Qg - Gate Charge	77 nC
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Configuration	Single
Vgs - Gate-Source Voltage	20 V
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Technology	Si
Minimum Operating Temperature	- 55 C
Vds - Drain-Source Breakdown Voltage	60 V
Vgs th - Gate-Source Threshold Voltage	2.1 V
Packaging	Cut Tape, Reel
Pd - Power Dissipation	136 W
Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	1.95 mOhms