BSC039N06NS

MOSFETs N-Ch 60V 100A TDSON-8
Lead Time: 182 Days

SKU: BSC039N06NS

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R 59.72

R 38.19

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MOSFETs N-Ch 60V 100A TDSON-8

Products specifications

Rds On - Drain-Source Resistance	3.9 mOhms
Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	69 W
Vds - Drain-Source Breakdown Voltage	60 V
Qg - Gate Charge	27 nC
Configuration	Single
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2.1 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	100 A
Technology	Si
Tradename	OptiMOS
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Rds On - Drain-Source Resistance	3.9 mOhms
Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, MouseReel, Reel
Pd - Power Dissipation	69 W
Vds - Drain-Source Breakdown Voltage	60 V
Qg - Gate Charge	27 nC
Configuration	Single
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	2.1 V
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	100 A
Technology	Si
Tradename	OptiMOS
Transistor Polarity	N-Channel
Number of Channels	1 Channel