BSC050N03LSGXT

MOSFETs N-Ch 30V 79A TDSON-8 OptiMOS 3

SKU: BSC050N03LSGXT

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5000+

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R 5.82

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MOSFETs N-Ch 30V 79A TDSON-8 OptiMOS 3

Products specifications

Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	50 W
Vds - Drain-Source Breakdown Voltage	30 V
Minimum Operating Temperature	- 55 C
Technology	Si
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Rds On - Drain-Source Resistance	4.2 mOhms
Qg - Gate Charge	35 nC
Vgs th - Gate-Source Threshold Voltage	1 V
Id - Continuous Drain Current	80 A

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Products specifications

Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel
Channel Mode	Enhancement
Number of Channels	1 Channel
Vgs - Gate-Source Voltage	20 V
Pd - Power Dissipation	50 W
Vds - Drain-Source Breakdown Voltage	30 V
Minimum Operating Temperature	- 55 C
Technology	Si
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Rds On - Drain-Source Resistance	4.2 mOhms
Qg - Gate Charge	35 nC
Vgs th - Gate-Source Threshold Voltage	1 V
Id - Continuous Drain Current	80 A