BSC070N10NS3 G

MOSFETs N-Ch 100V 90A TDSON-8 OptiMOS 3
Lead Time: 98 Days

SKU: BSC070N10NS3 G

Availability: 7184 in stock

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MOSFETs N-Ch 100V 90A TDSON-8 OptiMOS 3
Lead Time: 98 Days

Products specifications

Pd - Power Dissipation	114 W
Rds On - Drain-Source Resistance	6.3 mOhms
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	90 A
Vgs th - Gate-Source Threshold Voltage	2 V
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	55 nC
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	100 V
Technology	Si
Tradename	OptiMOS
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Pd - Power Dissipation	114 W
Rds On - Drain-Source Resistance	6.3 mOhms
Minimum Operating Temperature	- 55 C
Id - Continuous Drain Current	90 A
Vgs th - Gate-Source Threshold Voltage	2 V
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	55 nC
Maximum Operating Temperature	+ 150 C
Vds - Drain-Source Breakdown Voltage	100 V
Technology	Si
Tradename	OptiMOS
Transistor Polarity	N-Channel
Number of Channels	1 Channel