BSC084P03NS3E G

MOSFETs P-Ch -30V -78.6A TDSON-8 OptiMOS P3
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SKU: BSC084P03NS3E G

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MOSFETs P-Ch -30V -78.6A TDSON-8 OptiMOS P3
Lead Time: 0 Days

Products specifications

Qg - Gate Charge	43.4 nC
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Technology	Si
Number of Channels	1 Channel
Configuration	Single
Rds On - Drain-Source Resistance	8.4 mOhms
Pd - Power Dissipation	69 W
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Tradename	OptiMOS
Id - Continuous Drain Current	78.6 A
Vgs - Gate-Source Voltage	25 V
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Qg - Gate Charge	43.4 nC
Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Technology	Si
Number of Channels	1 Channel
Configuration	Single
Rds On - Drain-Source Resistance	8.4 mOhms
Pd - Power Dissipation	69 W
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Tradename	OptiMOS
Id - Continuous Drain Current	78.6 A
Vgs - Gate-Source Voltage	25 V
Packaging	Cut Tape, MouseReel, Reel