BSC084P03NS3 G

MOSFETs P-Ch -30V -78.6A TDSON-8 OptiMOS P3
Lead Time: 56 Days

SKU: BSC084P03NS3 G

Availability: 9318 in stock

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MOSFETs P-Ch -30V -78.6A TDSON-8 OptiMOS P3
Lead Time: 364 Days

Products specifications

Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Qg - Gate Charge	58 nC
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Configuration	Single
Id - Continuous Drain Current	78.6 A
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	3.1 V
Pd - Power Dissipation	69 W
Technology	Si
Tradename	OptiMOS
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	6.1 mOhms

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Products specifications

Transistor Polarity	P-Channel
Vds - Drain-Source Breakdown Voltage	30 V
Qg - Gate Charge	58 nC
Minimum Operating Temperature	- 55 C
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Configuration	Single
Id - Continuous Drain Current	78.6 A
Channel Mode	Enhancement
Vgs th - Gate-Source Threshold Voltage	3.1 V
Pd - Power Dissipation	69 W
Technology	Si
Tradename	OptiMOS
Packaging	Cut Tape, MouseReel, Reel
Vgs - Gate-Source Voltage	25 V
Rds On - Drain-Source Resistance	6.1 mOhms