BSC100N06LS3GATMA1

MOSFETs N-Ch 60V 50A TDSON-8 OptiMOS 3
Lead Time: 182 Days

SKU: BSC100N06LS3GATMA1

Availability: 25691 in stock

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R 39.73

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MOSFETs N-Ch 60V 50A TDSON-8 OptiMOS 3
Lead Time: 364 Days

Products specifications

Rds On - Drain-Source Resistance	10 mOhms
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	1.2 V
Vds - Drain-Source Breakdown Voltage	60 V
Configuration	Single
Maximum Operating Temperature	+ 150 C
Tradename	OptiMOS
Vgs - Gate-Source Voltage	10 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Channel Mode	Enhancement
Pd - Power Dissipation	50 W
Technology	Si
Qg - Gate Charge	34 nC
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	50 A

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Products specifications

Rds On - Drain-Source Resistance	10 mOhms
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	1.2 V
Vds - Drain-Source Breakdown Voltage	60 V
Configuration	Single
Maximum Operating Temperature	+ 150 C
Tradename	OptiMOS
Vgs - Gate-Source Voltage	10 V
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Channel Mode	Enhancement
Pd - Power Dissipation	50 W
Technology	Si
Qg - Gate Charge	34 nC
Packaging	Cut Tape, MouseReel, Reel
Id - Continuous Drain Current	50 A