BSC123N08NS3GATMA1

MOSFETs N-Ch 80V 55A TDSON-8 OptiMOS 3
Lead Time: 140 Days

SKU: BSC123N08NS3GATMA1

Availability: 35875 in stock

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MOSFETs N-Ch 80V 55A TDSON-8 OptiMOS 3
Lead Time: 140 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	80 V
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	12.3 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	19 nC
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Technology	Si
Vgs - Gate-Source Voltage	10 V
Transistor Polarity	N-Channel
Pd - Power Dissipation	66 W
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	55 A
Tradename	OptiMOS
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Vds - Drain-Source Breakdown Voltage	80 V
Channel Mode	Enhancement
Rds On - Drain-Source Resistance	12.3 mOhms
Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	19 nC
Number of Channels	1 Channel
Minimum Operating Temperature	- 55 C
Technology	Si
Vgs - Gate-Source Voltage	10 V
Transistor Polarity	N-Channel
Pd - Power Dissipation	66 W
Maximum Operating Temperature	+ 150 C
Id - Continuous Drain Current	55 A
Tradename	OptiMOS
Configuration	Single
Packaging	Cut Tape, MouseReel, Reel