BSC900N20NS3 G

MOSFETs N-Ch 200V 15.2A TDSON-8 OptiMOS 3
Lead Time: 105 Days

SKU: BSC900N20NS3 G

Availability: 3529 in stock

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MOSFETs N-Ch 200V 15.2A TDSON-8 OptiMOS 3
Lead Time: 105 Days

Products specifications

Configuration	Single
Technology	Si
Qg - Gate Charge	9 nC
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	2 V
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	90 mOhms
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	15.2 A
Pd - Power Dissipation	62.5 W
Vds - Drain-Source Breakdown Voltage	200 V
Packaging	Cut Tape, MouseReel, Reel

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Products specifications

Configuration	Single
Technology	Si
Qg - Gate Charge	9 nC
Number of Channels	1 Channel
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs th - Gate-Source Threshold Voltage	2 V
Transistor Polarity	N-Channel
Rds On - Drain-Source Resistance	90 mOhms
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	15.2 A
Pd - Power Dissipation	62.5 W
Vds - Drain-Source Breakdown Voltage	200 V
Packaging	Cut Tape, MouseReel, Reel