BSD235CH6327XTSA1

MOSFETs N and P-Ch 20V 950mA -530mA SOT-363-6
Lead Time: 105 Days

SKU: BSD235CH6327XTSA1

Availability: 282883 in stock

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MOSFETs N and P-Ch 20V 950mA -530mA SOT-363-6
Lead Time: 105 Days

Products specifications

Channel Mode	Enhancement
Technology	Si
Transistor Polarity	N-Channel, P-Channel
Qualification	AEC-Q101
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	2 Channel
Rds On - Drain-Source Resistance	350 mOhms, 1.2 Ohms
Qg - Gate Charge	340 pC, - 400 pC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	700 mV, 1.2 V
Id - Continuous Drain Current	950 mA, 530 mA
Vds - Drain-Source Breakdown Voltage	20 V
Configuration	Dual
Vgs - Gate-Source Voltage	4.5 V

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Products specifications

Channel Mode	Enhancement
Technology	Si
Transistor Polarity	N-Channel, P-Channel
Qualification	AEC-Q101
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	2 Channel
Rds On - Drain-Source Resistance	350 mOhms, 1.2 Ohms
Qg - Gate Charge	340 pC, - 400 pC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	700 mV, 1.2 V
Id - Continuous Drain Current	950 mA, 530 mA
Vds - Drain-Source Breakdown Voltage	20 V
Configuration	Dual
Vgs - Gate-Source Voltage	4.5 V