MOSFETs N-Ch 20V 950mA SOT-363-6
Lead Time: 84 Days
Products specifications
| Rds On - Drain-Source Resistance | 266 mOhms, 266 mOhms |
| Number of Channels | 2 Channel |
| Transistor Polarity | N-Channel |
| Qualification | AEC-Q101 |
| Vgs th - Gate-Source Threshold Voltage | 700 mV |
| Qg - Gate Charge | 320 pC, 320 pC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Vgs - Gate-Source Voltage | 12 V |
| Configuration | Dual |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Id - Continuous Drain Current | 950 mA |
| Technology | Si |
| Packaging | Cut Tape, Reel |
| Channel Mode | Enhancement |