MOSFETs P-Ch -20V -8.9A DSO-8 OptiMOS P
Products specifications
| Technology | Si |
| Id - Continuous Drain Current | 8.9 A |
| Tradename | OptiMOS |
| Transistor Polarity | P-Channel |
| Vgs - Gate-Source Voltage | 12 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Channel Mode | Enhancement |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Pd - Power Dissipation | 2.5 W |
| Qg - Gate Charge | - 39 nC |
| Packaging | Reel |
| Configuration | Single |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Rds On - Drain-Source Resistance | 15 mOhms |