MOSFET N and P-Ch 60V 3.1A, -2A DSO-8
Products specifications
| Vgs - Gate-Source Voltage | 20 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Technology | Si |
| Rds On - Drain-Source Resistance | 70 mOhms, 190 mOhms |
| Channel Mode | Enhancement |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Number of Channels | 2 Channel |
| Qg - Gate Charge | 22.5 nC, 20 nC |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V, 2 V |
| Packaging | Cut Tape, MouseReel, Reel |
| Id - Continuous Drain Current | 3.1 A, 2 A |
| Configuration | Dual |
| Transistor Polarity | N-Channel, P-Channel |
| Pd - Power Dissipation | 2 W |