BSP297 H6327

MOSFETs N-Ch 200V 660mA SOT-223-3

SKU: BSP297 H6327

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MOSFETs N-Ch 200V 660mA SOT-223-3
Lead Time: 77 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	200 V
Rds On - Drain-Source Resistance	1 Ohms
Packaging	Cut Tape, MouseReel, Reel
Technology	Si
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	800 mV
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Id - Continuous Drain Current	660 mA
Qg - Gate Charge	16.1 nC
Pd - Power Dissipation	1.8 W
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel

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Products specifications

Vds - Drain-Source Breakdown Voltage	200 V
Rds On - Drain-Source Resistance	1 Ohms
Packaging	Cut Tape, MouseReel, Reel
Technology	Si
Configuration	Single
Vgs th - Gate-Source Threshold Voltage	800 mV
Channel Mode	Enhancement
Vgs - Gate-Source Voltage	20 V
Number of Channels	1 Channel
Id - Continuous Drain Current	660 mA
Qg - Gate Charge	16.1 nC
Pd - Power Dissipation	1.8 W
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Transistor Polarity	N-Channel