BSP322PH6327XTSA1

MOSFETs P-Ch -100V 1A SOT-223-3
Lead Time: 70 Days

SKU: BSP322PH6327XTSA1

Availability: 8067 in stock

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MOSFETs P-Ch -100V 1A SOT-223-3
Lead Time: 56 Days

Products specifications

Rds On - Drain-Source Resistance	800 mOhms
Vds - Drain-Source Breakdown Voltage	100 V
Technology	Si
Pd - Power Dissipation	1.8 W
Configuration	Single
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	1 A
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2 V
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	12.4 nC
Transistor Polarity	P-Channel
Channel Mode	Enhancement
Number of Channels	1 Channel

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Products specifications

Rds On - Drain-Source Resistance	800 mOhms
Vds - Drain-Source Breakdown Voltage	100 V
Technology	Si
Pd - Power Dissipation	1.8 W
Configuration	Single
Vgs - Gate-Source Voltage	10 V
Id - Continuous Drain Current	1 A
Maximum Operating Temperature	+ 150 C
Vgs th - Gate-Source Threshold Voltage	2 V
Packaging	Cut Tape, MouseReel, Reel
Minimum Operating Temperature	- 55 C
Qg - Gate Charge	12.4 nC
Transistor Polarity	P-Channel
Channel Mode	Enhancement
Number of Channels	1 Channel