MOSFET N-Ch 55V 5.2A SOT-223-3 OptiMOS
Products specifications
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Number of Channels | 1 Channel |
| Channel Mode | Enhancement |
| Transistor Polarity | N-Channel |
| Configuration | Single |
| Rds On - Drain-Source Resistance | 33 mOhms |
| Vgs - Gate-Source Voltage | 20 V |
| Pd - Power Dissipation | 1.8 W |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Packaging | Cut Tape, MouseReel, Reel |
| Tradename | OptiMOS |
| Technology | Si |
| Qualification | AEC-Q101 |
| Id - Continuous Drain Current | 5.2 A |