BSS123NH6327XT

MOSFETs N-Ch 100V 190mA SOT-23-3

SKU: BSS123NH6327XT

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MOSFETs N-Ch 100V 190mA SOT-23-3

Products specifications

Qg - Gate Charge	900 pC
Rds On - Drain-Source Resistance	2.4 Ohms
Vds - Drain-Source Breakdown Voltage	100 V
Qualification	AEC-Q101
Packaging	Cut Tape, MouseReel, Reel
Vgs th - Gate-Source Threshold Voltage	800 mV
Technology	Si
Id - Continuous Drain Current	190 mA
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Configuration	Single
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Number of Channels	1 Channel

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Products specifications

Qg - Gate Charge	900 pC
Rds On - Drain-Source Resistance	2.4 Ohms
Vds - Drain-Source Breakdown Voltage	100 V
Qualification	AEC-Q101
Packaging	Cut Tape, MouseReel, Reel
Vgs th - Gate-Source Threshold Voltage	800 mV
Technology	Si
Id - Continuous Drain Current	190 mA
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Vgs - Gate-Source Voltage	20 V
Configuration	Single
Channel Mode	Enhancement
Transistor Polarity	N-Channel
Number of Channels	1 Channel