BSS670S2LH6327XT

MOSFETs N-Ch 55V 540mA SOT-23-3
Lead Time: 182 Days

SKU: BSS670S2LH6327XT

Availability: 10435 in stock

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MOSFETs N-Ch 55V 540mA SOT-23-3
Lead Time: 182 Days

Products specifications

Vds - Drain-Source Breakdown Voltage	55 V
Id - Continuous Drain Current	540 mA
Qg - Gate Charge	1.7 nC
Vgs th - Gate-Source Threshold Voltage	1.2 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Number of Channels	1 Channel
Configuration	Single
Qualification	AEC-Q101
Technology	Si
Transistor Polarity	N-Channel
Pd - Power Dissipation	360 mW
Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, MouseReel, Reel
Rds On - Drain-Source Resistance	650 mOhms

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Products specifications

Vds - Drain-Source Breakdown Voltage	55 V
Id - Continuous Drain Current	540 mA
Qg - Gate Charge	1.7 nC
Vgs th - Gate-Source Threshold Voltage	1.2 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Channel Mode	Enhancement
Number of Channels	1 Channel
Configuration	Single
Qualification	AEC-Q101
Technology	Si
Transistor Polarity	N-Channel
Pd - Power Dissipation	360 mW
Vgs - Gate-Source Voltage	10 V
Packaging	Cut Tape, MouseReel, Reel
Rds On - Drain-Source Resistance	650 mOhms