BSZ15DC02KD H

MOSFETs SMALL SIGNAL+P-CH
Lead Time: 182 Days

SKU: BSZ15DC02KD H

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R 44.60

R 28.20

R 18.79

R 15.40

R 13.48

R 12.41

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MOSFETs SMALL SIGNAL+P-CH

Products specifications

Channel Mode	Enhancement
Qg - Gate Charge	2.8 nC, - 4.5 nC
Configuration	Dual
Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	12 V
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	2 Channel
Rds On - Drain-Source Resistance	41 mOhms, 97 mOhms
Tradename	OptiMOS
Transistor Polarity	N-Channel, P-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	800 mV, 1.4 V
Technology	Si
Pd - Power Dissipation	2.5 W
Id - Continuous Drain Current	5.1 A, 3.2 A

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Products specifications

Channel Mode	Enhancement
Qg - Gate Charge	2.8 nC, - 4.5 nC
Configuration	Dual
Maximum Operating Temperature	+ 175 C
Vgs - Gate-Source Voltage	12 V
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Number of Channels	2 Channel
Rds On - Drain-Source Resistance	41 mOhms, 97 mOhms
Tradename	OptiMOS
Transistor Polarity	N-Channel, P-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Vgs th - Gate-Source Threshold Voltage	800 mV, 1.4 V
Technology	Si
Pd - Power Dissipation	2.5 W
Id - Continuous Drain Current	5.1 A, 3.2 A