BSZ900N20NS3GATMA1

MOSFETs N-Ch 200V 15.2A TDSON-8 OptiMOS 3
Lead Time: 112 Days

SKU: BSZ900N20NS3GATMA1

Availability: 16670 in stock

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MOSFETs N-Ch 200V 15.2A TDSON-8 OptiMOS 3
Lead Time: 364 Days

Products specifications

Vgs th - Gate-Source Threshold Voltage	2 V
Rds On - Drain-Source Resistance	77 mOhms
Id - Continuous Drain Current	15.2 A
Vgs - Gate-Source Voltage	20 V
Technology	Si
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	11.6 nC
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	200 V
Pd - Power Dissipation	62.5 W
Number of Channels	1 Channel
Channel Mode	Enhancement
Tradename	OptiMOS
Configuration	Single

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Products specifications

Vgs th - Gate-Source Threshold Voltage	2 V
Rds On - Drain-Source Resistance	77 mOhms
Id - Continuous Drain Current	15.2 A
Vgs - Gate-Source Voltage	20 V
Technology	Si
Maximum Operating Temperature	+ 150 C
Minimum Operating Temperature	- 55 C
Packaging	Cut Tape, MouseReel, Reel
Qg - Gate Charge	11.6 nC
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	200 V
Pd - Power Dissipation	62.5 W
Number of Channels	1 Channel
Channel Mode	Enhancement
Tradename	OptiMOS
Configuration	Single