MOSFET N-Ch 55V 19A D2PAK-4
Products specifications
| Channel Mode | Enhancement |
| Qualification | AEC-Q101 |
| Technology | Si |
| Rds On - Drain-Source Resistance | 18 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V |
| Packaging | Cut Tape, MouseReel, Reel |
| Minimum Operating Temperature | - 40 C |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 60 nC |
| Configuration | Single |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 120 W |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Id - Continuous Drain Current | 19 A |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |