F3L25R12W1T4B27BOMA1

IGBT Modules 1200 V, 25 A 3-level IGBT module
Lead Time: 70 Days

SKU: F3L25R12W1T4B27BOMA1

Availability: 47 in stock

Qty:

PRICE BREAKS - The more you buy, the more you save

Quantity

1+

10+

Price

R 849.70

R 570.57

Free shipping

IGBT Modules 1200 V, 25 A 3-level IGBT module
Lead Time: 70 Days

Products specifications

Maximum Operating Temperature	+ 150 C
Technology	Si
Product	IGBT Silicon Modules
Continuous Collector Current at 25 C	25 A
Packaging	Tray
Collector-Emitter Saturation Voltage	1.85 V
Pd - Power Dissipation	215 W
Minimum Operating Temperature	- 40 C
Collector- Emitter Voltage VCEO Max	1200 V
Gate-Emitter Leakage Current	100 nA
Configuration	3-Phase

Your name *

Your email *

Enquiry *

Products specifications

Maximum Operating Temperature	+ 150 C
Technology	Si
Product	IGBT Silicon Modules
Continuous Collector Current at 25 C	25 A
Packaging	Tray
Collector-Emitter Saturation Voltage	1.85 V
Pd - Power Dissipation	215 W
Minimum Operating Temperature	- 40 C
Collector- Emitter Voltage VCEO Max	1200 V
Gate-Emitter Leakage Current	100 nA
Configuration	3-Phase