FF300R12KS4PHOSA1

IGBT Modules 1200 V, 300 A dual IGBT module

SKU: FF300R12KS4PHOSA1

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Quantity

8+

Price

R 4,277.47

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IGBT Modules 1200 V, 300 A dual IGBT module

Products specifications

Gate-Emitter Leakage Current	400 nA
Product	IGBT Silicon Modules
Maximum Operating Temperature	+ 125 C
Minimum Operating Temperature	- 40 C
Technology	Si
Collector- Emitter Voltage VCEO Max	1200 V
Continuous Collector Current at 25 C	300 A
Packaging	Tray
Configuration	Dual
Collector-Emitter Saturation Voltage	3.2 V

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Products specifications

Gate-Emitter Leakage Current	400 nA
Product	IGBT Silicon Modules
Maximum Operating Temperature	+ 125 C
Minimum Operating Temperature	- 40 C
Technology	Si
Collector- Emitter Voltage VCEO Max	1200 V
Continuous Collector Current at 25 C	300 A
Packaging	Tray
Configuration	Dual
Collector-Emitter Saturation Voltage	3.2 V