IGBT Modules 3300 V, 450 A dual IGBT module
Products specifications
| Minimum Operating Temperature | - 40 C |
| Gate-Emitter Leakage Current | 400 nA |
| Product | IGBT Silicon Modules |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Maximum Operating Temperature | + 150 C |
| Packaging | Tray |
| Configuration | Dual |
| Continuous Collector Current at 25 C | 450 A |
| Collector- Emitter Voltage VCEO Max | 3300 V |