IGBT Modules MEDIUM POWER ECONO
Lead Time: 0 Days
Products specifications
| Gate-Emitter Leakage Current | 400 nA |
| Product | IGBT Silicon Modules |
| Maximum Operating Temperature | + 150 C |
| Packaging | Tray |
| Minimum Operating Temperature | - 40 C |
| Pd - Power Dissipation | 20 mW |
| Configuration | Common Emitter |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Continuous Collector Current at 25 C | 600 A |
| Collector-Emitter Saturation Voltage | 1.75 V |