MOSFETs MOSFET_(75V 120V(
Lead Time: 126 Days
Products specifications
| Vgs - Gate-Source Voltage | 10 V |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Qg - Gate Charge | 128 nC |
| Qualification | AEC-Q101 |
| Configuration | Single |
| Technology | Si |
| Rds On - Drain-Source Resistance | 1.9 mOhms |
| Packaging | Cut Tape, Reel |
| Vgs th - Gate-Source Threshold Voltage | 2.2 V |
| Id - Continuous Drain Current | 260 A |
| Maximum Operating Temperature | + 175 C |
| Channel Mode | Enhancement |
| Pd - Power Dissipation | 300 W |
| Minimum Operating Temperature | - 55 C |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |