IGBT Modules 1200 V, 450 A dual IGBT module
Products specifications
| Maximum Operating Temperature | + 150 C |
| Gate-Emitter Leakage Current | 400 nA |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Product | IGBT Silicon Modules |
| Packaging | Tray |
| Collector-Emitter Saturation Voltage | 1.75 V |
| Continuous Collector Current at 25 C | 450 A |
| Minimum Operating Temperature | - 40 C |