IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
Products specifications
| Collector-Emitter Saturation Voltage | 1.48 V |
| Maximum Operating Temperature | + 175 C |
| Pd - Power Dissipation | 310 W |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Configuration | Single |
| Minimum Operating Temperature | - 40 C |
| Continuous Collector Current at 25 C | 40 A |
| Mounting Style | Through Hole |
| Packaging | Tube |
| Series | RC |
| Technology | Si |