IGBT Transistors 600V 50A 100nA
Products specifications
| Technology | Si |
| Continuous Collector Current at 25 C | 80 A |
| Collector-Emitter Saturation Voltage | 1.9 V |
| Maximum Gate Emitter Voltage | 20 V |
| Minimum Operating Temperature | - 40 C |
| Mounting Style | Through Hole |
| Maximum Operating Temperature | + 175 C |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Configuration | Single |
| Pd - Power Dissipation | 333 W |
| Packaging | Tube |
| Series | TRENCHSTOP |