RF MOSFET Transistors DE-475 21A 1000V N Channel MOSFET
Products specifications
| Id - Continuous Drain Current | 24 A |
| Vds - Drain-Source Breakdown Voltage | 1000 V |
| Technology | Si |
| Rds On - Drain-Source Resistance | 450 mOhms |
| Packaging | Tube |
| Output Power | 1.8 kW |
| Minimum Operating Temperature | - 55 C |
| Product Type | RF MOSFET Transistors |
| Maximum Operating Temperature | + 175 C |
| Transistor Polarity | N-Channel |