IGBT Modules XPT IGBT phaseleg
Products specifications
| Gate-Emitter Leakage Current | 200 nA |
| Maximum Operating Temperature | + 150 C |
| Collector- Emitter Voltage VCEO Max | 1.2 kV |
| Minimum Operating Temperature | - 55 C |
| Configuration | Dual |
| Collector-Emitter Saturation Voltage | 1.85 V |
| Product | IGBT Silicon Modules |
| Continuous Collector Current at 25 C | 63 A |
| Pd - Power Dissipation | 230 W |