IGBTs N-Channel: Power MOSFET w/Fast Diode
Lead Time: 217 Days
Products specifications
| Series | IXA45IF1200HB |
| Configuration | Single |
| Continuous Collector Current at 25 C | 78 A |
| Mounting Style | Through Hole |
| Maximum Gate Emitter Voltage | 20 V |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 325 W |
| Technology | Si |
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Packaging | Tube |