IGBT Modules XPT Single IGBT
Lead Time: 273 Days
Products specifications
| Collector- Emitter Voltage VCEO Max | 1200 V |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Gate-Emitter Leakage Current | 500 nA |
| Packaging | Tube |
| Pd - Power Dissipation | 350 W |
| Configuration | Single |
| Collector-Emitter Saturation Voltage | 1.8 V |
| Product | IGBT Silicon Modules |
| Continuous Collector Current at 25 C | 100 A |