IGBTs High Voltage High Gain BIMOSFET
Products specifications
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Technology | Si |
| Collector-Emitter Saturation Voltage | 2.7 V |
| Mounting Style | Through Hole |
| Continuous Collector Current at 25 C | 86 A |
| Pd - Power Dissipation | 357 W |
| Collector- Emitter Voltage VCEO Max | 3 kV |