IXDH20N120D1

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IGBT Transistors 20 Amps 1200V
Lead Time: 224 Days

SKU: IXDH20N120D1

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IGBT Transistors 20 Amps 1200V
Lead Time: 224 Days

Products specifications

Manufacturer	ON Semiconductor
Product Category	IGBT Transistors
RoHS	Details
Package/Case	TO-3PN-3
Collector- Emitter Voltage VCEO Max	1200 V, 1.2 kV
Maximum Gate Emitter Voltage	25 V
Series	FGA20N120FTD, IXDH20N120
Continuous Collector Current Ic Max	40 A
Height	18.9 mm
Length	15.8 mm
Width	5 mm
Brand	ON Semiconductor / Fairchild
Product Type	IGBT Transistors
Factory Pack Quantity	450
Subcategory	IGBTs
Unit Weight	6.401 g
Continuous Collector Current at 25 C	38 A
Mounting Style	Through Hole
Pd - Power Dissipation	200 W
Configuration	Single
Packaging	Tube
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Collector-Emitter Saturation Voltage	2.4 V

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Products specifications

Manufacturer	ON Semiconductor
Product Category	IGBT Transistors
RoHS	Details
Package/Case	TO-3PN-3
Collector- Emitter Voltage VCEO Max	1200 V, 1.2 kV
Maximum Gate Emitter Voltage	25 V
Series	FGA20N120FTD, IXDH20N120
Continuous Collector Current Ic Max	40 A
Height	18.9 mm
Length	15.8 mm
Width	5 mm
Brand	ON Semiconductor / Fairchild
Product Type	IGBT Transistors
Factory Pack Quantity	450
Subcategory	IGBTs
Unit Weight	6.401 g
Continuous Collector Current at 25 C	38 A
Mounting Style	Through Hole
Pd - Power Dissipation	200 W
Configuration	Single
Packaging	Tube
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Technology	Si
Collector-Emitter Saturation Voltage	2.4 V