IXDN55N120D1

IGBT Transistors 55 Amps 1200V

SKU: IXDN55N120D1

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R 761.27

R 724.62

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IGBT Transistors 55 Amps 1200V

Products specifications

Configuration	Single Dual Emitter
Packaging	Tube
Minimum Operating Temperature	- 40 C
Collector-Emitter Saturation Voltage	2.3 V
Maximum Operating Temperature	+ 150 C
Technology	Si
Collector- Emitter Voltage VCEO Max	1200 V
Series	IXDN55N120

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Products specifications

Configuration	Single Dual Emitter
Packaging	Tube
Minimum Operating Temperature	- 40 C
Collector-Emitter Saturation Voltage	2.3 V
Maximum Operating Temperature	+ 150 C
Technology	Si
Collector- Emitter Voltage VCEO Max	1200 V
Series	IXDN55N120