IGBTs High Frequency Range 40khz C-IGBT w/Diod
Lead Time: 189 Days
Products specifications
| Pd - Power Dissipation | 220 W |
| Product | IGBT Silicon Modules |
| Packaging | Tube |
| Configuration | Single |
| Collector-Emitter Saturation Voltage | 600 V |
| Minimum Operating Temperature | - 55 C |
| Gate-Emitter Leakage Current | 100 nA |
| Maximum Operating Temperature | + 150 C |
| Continuous Collector Current at 25 C | 60 A |