IGBTs 75 Amps 600V 1.05 V Rds
Lead Time: 189 Days
Products specifications
| Gate-Emitter Leakage Current | 100 nA |
| Collector-Emitter Saturation Voltage | 600 V |
| Pd - Power Dissipation | 300 W |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Product | IGBT Silicon Modules |
| Packaging | Tube |